lahustunud aatomite suurenenud kontsentratsioon kristalli defektidel, nt nagu vabapinnad, terapiir, kontaktpind, pakkeviga, dislokatsioon (vt terapiir, kontaktpind)
increased concentration of solute atoms at crystal defects such as free surfaces, grain boundary, interface, stacking fault, or dislocation (see: grain boundary, interface)
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