a high-temperature furnace in which refractory tubes are maintained at 1000-1200°C with an accuracy of one degree or better, and in which a controlled gas ambient is maintained, enabling solid-state diffusion processes to be conducted as a means of fabricating semiconductor devices
Difusioonmenetlus - pn-siiret või -siirdeid sisaldava pooljuhtstruktuuri valmistamise viis, mis hrl seisneb monokristallist lõigatud ja kõrge t°-ni kuumutatud pooljuhtplaadi hoidmises legeerivat ainet sisaldavas gaasis või aurus ... Difusiooniahju töötsoonis hoitakse t°-i 700-1300 °C täpsusega ±0,5 °C.
Other articles of glass: 7020 00 05 (a) - Quartz reactor tubes and holders designed for insertion into diffusion and oxidation furnaces for production of semiconductor materials
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